Refractory Metal Substrate with Improved Thermal Conductivity

ABSTRACT

A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.

BACKGROUND OF TUE INVENTION

1. Field of the Invention

The present invention is generally related to direct mount heat sinksfor heat generating devices used in electronic applications and inparticular to heat sinks containing Group VIB metals from the periodictable of the elements.

2. Description of the Prior Art

Refractory metals, such as molybdenum, have long been used as directmount heat sinks for heat generating devices used in electronics. Itshigh thermal conductivity, on the order of 140 W/M°K, in some casesprovide adequate thermal conductivity and a close thermal expansionmatch (TCE of 5.1 ppm/° C.) to materials like silicon.

Such materials often have poor solderability, which can be improved byapplying a thin layer of Ni on to one or both surfaces. Also, layers ofCu are often deposited as a thin layer, such as by cladding, spraying,etc., on to the surface in order to alter the thermal expansionproperties to match-other devices, such as for example GaAs containingdevices (TCE of 6.5 ppm/° C.). Such materials having thin Cu layers(laminates) often have unpredictable expansion characteristics duringthermal cycling due to uneven distribution of the material in thesurface layer or from layer to layer.

In some instances, metal matrix composites such as powder metal matricesof tungsten or molybdenum infiltrated with copper have provided improvedthermal characteristics to meet the requirements of either a closer TCEmatch or higher thermal conductivity. A powder matrix of this type islimited as to the amounts of higher thermal conductivity materials whichcan be added without creating thermal expansions that are too high.

Such composite matrix materials are inconsistent in structure and do notperform as predicted by the law of mixtures -as the high thermalconductivity copper matrix is often not open enough to conduct heat inan unrestricted fashion (i.e., narrow paths, flow blocked by touchingrefractory metal particles, etc.). Thus, some of the heat must betransferred through the lower thermally conductive refractory metalmatrix. Additionally, low levels of porosity exist in the matrixstructure restricting thermal flow.

In many cases laminate or matrix systems of Mo—Cu or W—Cu are made intothin structures by way of standard metallurgical procedures such bysawing, cutting, rolling, grinding, and/or lapping, which inducestresses in the material that cannot be completely relieved. Thestresses cause warping of the material at thin gauges when exposed toelevated temperature soldering processes.

Materials commonly used for electronic packaging include Al-Graphite,Cu-Graphite, CuMoCu laminate, CuMoCu laminate with a MoCu powdered metalcore, W—Cu metal matrix composites, Mo—Cu metal matrix composites,SILVAR® (available from Engineered Materials Solutions, Inc., Attleboro,Mass.), Al—Si metal matrix composites, Al—SiC metal matrix composites,and Cu-SiC metal matrix composites.

U.S. Pat. No. 4,996,115 discloses a composite structure and a method ofproducing said composite structure from a combination of copper and alow coefficient of thermal expansion nickel-iron alloy where the copperclads the nickel-iron sheet and is interposed through the centralnickel-iron sheet in such a fashion as to provide a substantiallyisotropic heat transfer path. However, the rolling process used to forgethe copper-clad sheet results in non-uniform elongated holes that canresult in non-uniform heat transfer and dissipation. Additionally, thelarge hole size, 40-60 mil, is generally not appropriate for electronicapplications.

U.S. Pat. No. 5,011,655 discloses a methods of manufacturing a thinmetallic body composite structure. An inner layer of a first metal iscleaned to remove oxides and promote metallurgical bonding. The innerlayer has a plurality of penetrating holes piercing the thickness of theinner layer. The penetrating holes are filled with metal powder of asecond metal. Two outer layers of the second metal are placed onopposite sides of the cleaned and filled inner layer to form a sandwichstructure. The sandwich structure is heated to a temperature at whichrecrystallization will occur in a non-oxidizing atmosphere. The sandwichstructure is then hot worked to reduce thickness of the sandwichstructure forming the thin metallic body composite structure.Unfortunately, the hot working procedure used to forge the compositestructure can result in non-uniform elongated holes that can result innon-uniform heat transfer and dissipation. Additionally, although thecomposite structure is targeted for use in electronic applications, thelarge hole size, 40-62 mil, is generally not optimal for suchapplications. Further, porosity of the powder used to fill the holesdetracts from its ability to conduct heat. U.S. Pat. No. 5,156,923discloses a metal composite containing layers of copper and Invar, whichare cold pressure rolled with reduction in thickness to bemetallurgically bonded together in interleaved relation, and strips ofthe bonded materials are cold pressure rolled together a plurality oftimes with reduction in thickness to be metallurgically bonded together.The resulting metal composite breaks up the layers of Invar todistribute portions of the Invar material in a copper matrix, whichlimit thermal expansion of the composite. However, the composite has alimited ability to dissipate heat vertically or in the z-axis direction.

A particular limitation on the use of composite structures is that theyare typically porous and cannot be used, for example, in applicationswhere gas or air leakage needs to be prevented, as for example insatellite applications, especially in structures less than 20 mil thick.

U.S. Pat. No. 6,555,762 discloses a high density, electronic packagehaving a conductive composition for filling vias or through-holes tomake vertical or Z-connects from a dielectric layer to adjacentelectrical circuits. The through holes may be plated or non-plated priorto filling.

The above-described matrix materials are also very difficult to obtainin the desired thickness range of less than 20 mils without considerableprocessing which builds up stress in the refractory metal matrices,which cannot be relieved by thermal processing because of the lowmelting point of the high thermally conductive infiltrant.

Obtaining a thin material is extremely important because of the thermalrelationship:

R=Const. L/KA

where R is thermal resistance. L is the distance the heat flows or thethickness of the spreader, K is the thermal conductivity of the thermalspreader and A is area. The lower the thermal resistance, the better theperformance as a heat sink, which is impacted as follows:

-   -   Shorter distance for heat flow and thinner spreaders provide        better performance.    -   Higher thermal conductivity results in lower thermal resistance.    -   The greater the area that the heat can be spread over, the lower        the thermal resistance,

Luedtke, Thermal Management Materials for High-Performance Applications,Advanced Engineering Materials, 6, No. 3 (2004), pp 142-144, discussescopper coated molybdenum and copper coated molybdenum-copper matrixmaterials as heat spreaders. However, these materials only provideeffective thermal conductivities between 190 and 250 W/M°K.

Generally, the prior art discloses materials, such as Ni—Fe alloys withvias designed to improve z-axis thermal conductivity, that approach theproperties of refractory metals. However, current needs, especially inthe electronics industry, are for materials that surpass the propertiesof refractory metals. For example, materials with more, but smalleruniform holes that can be filled without stressing the material and areable to dissipate heat in all directions with superior properties tocurrently available refractory metal systems as well as other systems.

Thus, there is a need in the art for heat sink materials useful withheat generating electronic components that are sufficiently thin and canadequately conduct, remove and dissipate the generated heat in alldirections while maintaining dimensional stability.

SUMMARY OF THE INVENTION

The present invention is directed to a substrate for electronicpackaging components and integrated circuit components including:

-   -   a core plate containing a Group VIB metal or other high        thermally conductive materials from the periodic table of the        elements and/or an anisotropic material, having a first major        surface and a second major surface and a plurality of openings        extending, at least partially, from the first major surface to        the second major surface;    -   a Group IB metal from the periodic table of the elements or        other high thermally conductive material filling at least a        portion of the space encompassed by at least some of the        openings; and    -   optionally, a layer containing a Group IB metal from the        periodic table of the elements disposed over at least a portion        of the first major surface and at least a portion of the second        major surface.

The present invention is also directed to a method of making theabove-described substrate for semiconductor and integrated circuitcomponents, the method includes:

-   -   providing a foil or plate comprising a Group VIB metal from the        periodic table of the elements or anisotropic material;    -   forming a plurality of openings extending, at least partially,        from a first major surface to a second major-surface of the foil        or plate;    -   filling the space encompassed by at least some of the openings        with a Group IB metal from the periodic table of the elements;        and    -   optionally forming a layer comprising a Group IB metal from the        periodic table of the elements over at least a portion of the        first major surface and at least a portion of the second major        surface.

The present invention is additionally directed to electronic devicesthat include the above-described substrate and one or more semiconductorcomponents.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a plan view of a foil or plate with holes according to theinvention;

FIG. 2 shows a cross-sectional view of the foil or plate in FIG. 1;

FIG. 3 shows a cross-sectional view of one example of a foil or platewith holes according to the invention where the surfaces have beencoated and the holes filled with a metal;

FIG. 4 shows a cross-section view of a sandwich substrate according tothe invention; and

FIG. 5 shows a 30× photograph of a cross-sectioned two layer perforatedmolybdenum substrate that has been copper filled and coated according tothe invention.

DETAILED DESCRIPTION OF THE INVENTION

Other than in the operating examples, or where otherwise indicated, allnumbers or expressions referring to quantities of ingredients, reactionconditions, etc. used in the specification and claims are to beunderstood as modified in all instances by the term “about.”

As used herein, the phrase “the rule of mixtures” refers to the thermalresponse a material containing two or more components exhibits. In therule of mixtures, the thermal properties of a substrate, containing morethan one material, in a longitudinal direction (properties parallel,i.e., in an x-y plane) are estimated as the sum of the responses of thecomposite components weighted by the component volume fractions.

The present invention utilizes etching, stamping, drilling, laserdrilling, chemical milling, or combinations thereof to create arepetitive network of precision holes extending at least partiallythrough a refractory metal foil or plate. At least a portion of theholes are at least partially filled with a coating that includes one ormore thermally conductive materials. Very thin spreaders of, for examplemolybdenum and/or tungsten can be created having high thermalconductivity vias without the thermal stress retention drawbacksassociated with laminate or matrix compositions as described above.Thus, a new family of materials with significantly lower thermalresistance and higher z-axis thermal conductivities than are availablefor known refractory metal based heat sinks is provided.

As used herein, “an anisotropic material” refers to materials thatexhibit different thermal conductivity values in an x-y plane than alonga z-axis perpendicular to the x-y plane. A non-limiting example of ananisotropic material that can be used in the present invention isgraphite.

The present invention provides a substrate, that can be used as a heatspreader for semiconductor and integrated circuit components thatincludes

-   -   a core plate having a first major surface and a second major        surface and a plurality of openings extending, at least        partially, from the first major surface to the second major        surface;    -   a metal or other high thermally conductive material filling at        least a portion of the space encompassed by at least some of the        openings; and    -   optionally, a layer containing a metal or other high thermally        conductive material disposed over at least a portion of the        first major surface and at least a portion of the second major        surface.

The core plate includes a Group VIB metal from the periodic table of theelements and/or an anisotropic material. In an embodiment of theinvention, the Group VIB metal is selected from molybdenum, tungsten, analloy containing molybdenum and tungsten, an alloy of molybdenum, analloy of tungsten, and combinations thereof.

The core plate can have a thickness of at least 1, in some cases atleast 2, in other cases at least 3, in some situations at least 4 and inother situations at least 5 mils.

Also, the core plate can have a thickness of to up to 50, in some casesup to 40, in other cases up to 30, in some situations up to 25, in othersituations up to 20, in some instances up to 15, and in other instanceup to 10 mils. When the core plate is too thick, its thermal resistancemay be too high since the heat must travel a greater distance. The coreplate can have a thickness represented by any of the values recitedabove or can have a thickness ranging between any of the values recitedabove.

In a particular embodiment of the invention, the thickness of the coreplate varies form 1 to 10 mils for a first portion of the foil or plateto 5 to 50 mils over a second portion of the foil or plate.

In an embodiment of the invention, the core plate comprises one or moremetals and has a thermal conductivity of at least 50, in some cases atleast 75 and in other cases at least 100 W/M°K. Also, the core plate canhave a thermal conductivity up to 200, in some cases up to 175 and inother cases up to 150 W/ M°K. The core plate can have a thermalconductivity represented by any of the values recited above or can havea thermal conductivity ranging between any of the values recited above.

In another embodiment of the invention, the core plate comprises ananisotropic material. The anisotropic material can have a thermalconductivity of at least 50, in some cases at least 75 and in othercases at least 100 W/M°K. Also, the core plate can have a thermalconductivity up to 2,200, in some cases up to 1,750, and in other casesup to 1,500 W/M°K in the x-y plane, The core plate can have a thermalconductivity represented by any of the values recited above or can havea thermal conductivity ranging between any of the values recited above.

The core plate according to the invention has holes or “vias” thatextend at least partially through the core plate. The holes can have anysuitable shape. Suitable shapes for the holes include, but are notlimited to round, square, rectangular, hexagonal, octagonal andcombinations thereof. Combination shapes can result, for example, wheredifferent techniques for forming holes are used on each surface of thecore plate and through holes are formed when the individual holes meetor simply due to acceptable tolerance variations in the manufactureprocess.

Additionally, the holes can have any suitable cross-sectional shape.Suitable cross-sectional shapes for the holes include, but are notlimited to an hour glass-type shape, cone shape, straight sided shapeand combinations thereof.

FIGS. 1 and 2 show a particular embodiment of the core plate used in thepresent invention. Core plate 10 includes the body 12 of core plate 10and the holes 14 that 10 extend at least Partially through body 12. Asshown in FIG. 2, holes 14 extend completely through body 12 and hole 16extends only partially through body 12.

In an embodiment of the invention, the openings in the core plate canmake up at least. 5, in some cases at least 10, in other cases at least15, in some situations at least 20, and in other situations at least 25percent of the volume of the core plate. Also, the openings in the coreplate can provide up to 90, in some cases up to 75, in other cases up to60, in some situations up to 50, and in other situations up to 40percent of the volume of the core plate.

The diameter and shape of the holes can vary according to generallyaccepted manufacturing tolerances in the art. Typically, in the presentinvention the holes are smaller and more numerous than those in theprior art which leads to improved heat dissipation in the vertical orz-axis direction and, which is also more compatible with electronic andcomputer related applications. Generally, the present substrates provideperformance that exceeds that found using refractory metals, such astungsten or molybdenum alone.

In an embodiment of the invention, the holes or openings can be at least2 mil some cases at least 3 mil and in other cases at least 5 mil indiameter measured at the widest point. Also, the holes can be up to 25mil, in some cases up to 20 mil, and in other cases up to 15 mil indiameter. The size of the holes depends on the area and thickness of thecore plate as well as the particular thermal conductivity propertiesdesired in the final product. The diameter of the holes can be any valueor range between any of the values recited above.

In an embodiment of the invention, the ratio of the diameter of theholes or openings to the thickness of the core plate or foil can be atleast 0.75, in some cases at least 0.8, in other cases at least 0.9 andin some instances at least 1, where the opening is measured at thewidest point. Also, the ratio of the diameter of the holes or openingsto the thickness of the core plate or foil can be up to 1.5, in somecases up to 1.4, in other cases up to 1.3, in some instances up to 1.25and in other instances up to 1.2. The ratio of the diameter of the holesor openings to the thickness of the core plate or foil can be any valueor range between any of the values recited above.

The layer in the present substrate is disposed over at least a portionof the first major surface and at least a portion of the second majorsurface of the core plate and can contain a Group IB metal from theperiodic table of the elements. The layer material also at leastpartially fills tile space encompassed by at least some of the holes oropenings in the core plate.

Any suitable Group IB metal can be used in the layer. Suitable Group IBmetals include, but are not limited to copper, an alloy of copper,silver, or an alloy of silver.

The layer can also include a high thermally conductive material. Suchmaterials typically have a thermal conductivity of at least 200 W/M°K.Suitable high thermally conductive materials include, but are notlimited to diamond, alloys, composite materials, and nanotubes.

As used herein the term “alloys” that are a high thermally conductivematerial refer to compositions containing, one or more metals that havea thermal conductivity of at least 200 W/M°K.

As used herein the term “composite materials” refers to compositionsthat contain a Group IB metal and at least one other material.

As used herein, the term “nanotubes” refers to systems that consist ofgraphitic layers seamlessly wrapped to cylinders. The cylinders aretypically only a few nanometers in diameter and can be up to amillimeter or more in length. The length-to-width aspect ratio isextremely high.

In a particular embodiment of the invention, the layer can include atleast 0.001, in some cases at least 0.01, and in other cases at least0.1 percent by weight Ni and up to 1, in some cases 0.75 and in othercases up to 0.5 percent by weight of the layer of Ni. In an embodimentof the invention, the Ni can be applied as a thin layer over the surfaceof the plate or foil. The inclusion of Ni can allow the Group IB metallayer to better wet the surface of the core plate and fill the holes asdesired.

In an embodiment of the invention, the Group IB metal or other highthermally conductive material layer contains one or more materialshaving a thermal conductivity of at least 200, in some cases as least350 and in other cases at least 500 and up to 2,200, in other instanceup to 1,500, in some instances up to 1,200, in some cases up to 1,100and in other cases up to 1,000 W/M°K. The thermal conductivity of theparticular materials in the layer can be any of the values or rangebetween any of the values recited above.

In an embodiment of the invention, at least some of the holes oropenings in the core plate or foil are at least partially filled withone or more Group IB metals or other high thermally conductive materialand no layer is disposed on any surface of the core plate or foil.

In another embodiment of the invention the holes or openings in the coreplate or foil are at least partially filled with one or more Group IBmetals or other high thermally conductive materials and a layer isdisposed over at least a portion of a surface of the core plate or foil.When a layer is present (i.e., there can be a layer thickness of zero),the layer, on each surface of the core plate, can have a thickness of atleast 0.001, in some cases at least 0.01, in other cases at least 0.1,in some situations at least 1, in other situations at least 2, in someinstances at least 3 and in other instances at least 5 mils. When thelayer is too thin, its heat spreading capability will be diminished.Also, the layer can have a thickness of to up to 50, in some cases up to40, in other cases up to 30, in some situations up to 25, in othersituations up to 20, in some instances up to 15, and in other instanceup to 10 mils. The layer can have a thickness represented by any of thevalues recited above or can have a thickness ranging between any of thevalues recited above.

In an embodiment of the invention, the layer of a Group IB metal isuniform from one side of the substrate to the other, uniform meaningthat the thickness of the layer does not vary more than ±10%, in somecases no more than ±5%, from one side of the substrate to the other.

In a particular embodiment of the invention, the layer is not uniformacross the surfaces of the core plate. In a particular embodiment, thethickness of the layer varies from zero or 0.001 to 10 mils over a firstportion of the core plate to 5 to 50 mils over a second portion of thecore plate.

When a layer is present, any suitable ratio of the core plate thicknessto the thickness of each layer can be used in the present substrate. Inan embodiment of the invention, the ratio of the thickness of the coreplate to the thickness of the layer over the first major surface can befrom 1:0.1 to 1:2, in some cases from 1:0.5 to 1:1.5, in other cases1:0.75 to 1:1.25 and in particular instances approximately 1:1.Additionally, the layer over the second major surface can be from 1:0.1to 1:2, in some cases from 1:0.5 to 1:1.5, in other cases 1:0.75 to1:1.25 and in particular instances approximately 1:1.

The layer has a thermal conductivity of at least 200, in some cases atleast 250 and in other cases at least 300 W/M°K. Also, the layer canhave a thermal conductivity up to 500, in some cases up to 400, and inother cases up to 350 W/M°K.

The layer can have a thermal conductivity represented by any of thevalues recited above or can have a thermal conductivity ranging betweenany of the values recited above.

In an embodiment of the invention, the present substrate does notexhibit thermal properties as would be expected or predicted based onthe rule of mixtures. In a particular embodiment, the TCE is lower thanexpected or predicted. The predicted TCE of the present substrate can beat least 10% less, in some cases at least 20% less and in other cases atleast 25% lower than predicted by the rule of mixtures.

A particular embodiment of the invention is shown in FIG. 3. In thisembodiment, substrate 20 includes core plate or foil 24 with roughlyhour glass shaped holes 26 extending there through. Core plate 24contains one or more refractory Group VIB metals. Layer 22 is disposedover the surfaces of core plate 24 and fills holes 24. Layer 26 containscopper, an alloy of copper, silver, or an alloy of silver.

In an embodiment of the invention, the substrate can have a thermalconductivity of at least 50, in some cases at least 100, in other casesat least 150, in some instances at least 200, in other instances atleast 250, in some situations at least 275 and in other situations atleast 300 W/M°K. The substrate can have a thermal conductivityrepresented by any of the values recited above or can have a thermalconductivity ranging between any of the values recited above.

In an embodiment of the invention, the substrate has a thickness of atleast 1 mil, in some cases at least 2.5 mil and in other cases at least5 mil. Also, the substrate can have a thickness of up to 100 mil, insome cases up to 50 mil, in other cases up to 35 mil, and in someinstances up to 25 mil. The substrate thickness can be any value orrange between any of the values recited above.

In particular embodiments of the invention, specific combinations ofGroup VIB metals in the core plate and Group IB metals in the layer canbe used. As a particular example, the Group VIB metal can be molybdenumand the Group IB metal can be copper. In another particular example, theGroup VIB metal can be tungsten and the Group IB metal can be copper.

Typically, the Group VIB metal foil with holes at least partially filledwith a Group IB metal and optionally coated with a Group IB metal is ahermetic structure. As used herein, “hermetic structure” means that thefilled matrix of the invention is airtight, meaning that gasses cannotreadily pass through the structure. As a non-limiting example, theinventive matrix is hermetic in that it has a leak rate of less than1×10⁻⁵ std cc/sec at 1 atmosphere differential. As another non-limitingexample, the inventive matrix is hermetic in that it meets the leak ratespecifications required for satellite applications.

In an embodiment of the invention, two or more layers of substrates canbe “stacked” to provide a sandwich-type structure. In this embodiment,two or more core plates containing a Group VIB metal and/or ananisotropic material having a plurality of openings extending, at leastpartially, from a first major surface to a second major surface with theholes filled and surfaces coated with a layer of a Group IB metal, asdescribed above, are placed one on top of another.

A non-limiting example of a stacked substrate is shown in FIG. 4.Stacked substrate 50 includes first substrate layer 51, second substratelayer 52, and third substrate layer 53. Each of substrate layers 51, 52,and 53 include layers of a Group IB metal 55 disposed over the upper andlower surfaces of core plates 56, which contain a Group VIB metal and/oran anisotropic material, and holes 54 extending through substrate layers51, 52, and 53, which are filled with a Group IB metal. Although holes54 are shown in alignment one above the other, such an alignment isoptional, as the holes can be offset, which can be desirable in someinstances to aid in heat dissipation.

In the sandwich substrate of the present invention, heat can betransferred vertically (in a z-axis direction) between layers via theGroup IB metal filling holes 54. At each layer, heat is transferredlaterally, or in an x-y plane along Group IB metal layers 55. Thus, sucha structure effectively transfers heat in all directions.

In the sandwich substrate of the present invention can provide thickersubstrates than single layer substrates as adequate lateral (x-y plane)heat dissipation can be provided, Thus, the sandwich substrate of thepresent invention can have a thickness of at least 2 mil, in some casesat least 5 mil and in other cases at least 10 mil. Also, the sandwichsubstrate can have a thickness of up to 1,000 mil, in some cases up to500 mil, in other cases up to 250 mil, in some instances up to 200 mil,and in other instances up to 100 mil. The sandwich substrate thicknesscan be any value or range between any of the values recited above.

In a particular embodiment of the invention, the sandwich substrate ofthe present invention can have a thickness of from about 2 to about 40mil.

The sandwich structure of thin sheets according to the present inventioncan be particularly advantageous as more numerous, more uniform, smallerholes can be provided across the top and bottom surfaces of thesubstrate when compared to prior art methods or when thicker sheets areutilized to form the substrate. As hole diameter is related to substratethickness, making and filling very small holes in a very thin substrateand then stacking the very thin substrates as described above provides asubstrate surface with more numerous, more uniform, and smaller holes,and thus with an improved heat transfer capability.

In an embodiment of the invention, the stacked or sandwich structuredsubstrate has holes along one or both surfaces such that the ratio ofthe diameter of the hole openings to the thickness of the stackedsubstrate is less than 0.75.

As indicated above, prior art laminate or matrix systems of Mo—Cu orW—Cu are made into thin substrates by way of standard metallurgicalprocedures, which induce stresses in the material that cannot becompletely relieved. The stresses cause warping of the material at thingauges when exposed to elevated temperature soldering processes. Aparticular advantage of the present substrate for electronic packagingcomponents and integrated circuit components is that stresses in thecore plate can be relieved prior to adding the Group IB metal. Thisprevents warping at thin gauges as is found in the prior art materials.

The present invention also provides a method of making theabove-described substrate for semiconductor and integrated circuitcomponents. The method includes:

-   -   providing a foil or plate or plate containing a Group VIB metal        from the periodic table of the elements and/or an anisotropic        material;    -   forming a plurality of openings extending, at least partially,        from a first major surface to a second major surface of the foil        or plate;    -   forming a layer containing a Group IB metal from the periodic        table of the elements over at least a portion of the first major        surface and at least a portion of the second major surface; and    -   at least partially filling the space encompassed by at least        some of the openings with the Group IB metal.

The present method is advantageous in that it utilizes easy to handlecore plate or foil materials that are worked or modified using standardprocessing methods to which a Group IB metal is subsequently added. Thisis an advantage over prior art heat sink materials which require muchmore complicated and expensive processing steps.

In an embodiment of the invention, the openings are formed in the foilor plate by a method selected from etching, stamping, drilling, laserdrilling, chemical milling, and combinations thereof.

In another embodiment of the invention, the layer is formed using one ormethods selected from melting, thermal spray, powder melt,electroplating, melt and electroplate, sputtering, selective plating,infiltration, casting, pressure casting, and combinations thereof.

In an embodiment of the invention, all stress inducing process steps(for example, sawing, cutting, rolling, grinding, and/or lapping) arecompleted prior to adding the Group IB metal to the foil or plate.

In an embodiment of the invention, strips of the Group IB metal areplaced over a surface of the foil or plate and the strips are heated toa temperature at which the strips melt and fill the holes or openingsand optionally form a layer. In a particular embodiment, two or morelayers of strips are placed over a surface of the foil or plate andmelted. In the latter situation, improved heat distribution duringmelting and improved hole fill results. Not wishing to be bound to anyparticular theory, it is believed that the capillarity that resultsbetween unmelted upper strips and melted lower strips results inimproved flow, distribution and fill of the Group IB metal. This methodallows for preparing larger coated sections of the plate or foil due tothe improved spreading characteristic of the Group IB metal.

In an embodiment of the invention, a final reduction step can be used inthe method of making the above-described substrate for semiconductor andintegrated circuit components. The reduction step can be carried out inorder to make the surface more uniform, densify the substrate, reducethe thickness of the substrate and/or to temper the substrate. Anysuitable reduction step can be employed, suitable reduction stepsinclude, but are not limited to rolling and hot isostatic pressing.

The present invention also provides a substrate made according to theabove-described method.

The present invention also provides electronic packaging components thatinclude the substrate described above and one or more semiconductorcomponents.

Any suitable electronic packaging component can be included in theinvention, especially those that include heat generating components.Suitable electronic packaging components include, but are not limited towireless communications devices, fiber optic lasers, power generatingsemiconductors, resistors, and opto-electronic devices.

In an embodiment of the invention, the above-described substrate orstacked substrate can be attached to a second substrate of greater orlesser thermal expansion properties to form a combination substrate.Non-limiting examples of such second substrates include, but are notlimited to steel, aluminum, copper, or ceramic substrates. Thecombination substrates are advantageous as they have improved heatdistribution properties and the internal stresses are reduced.

As a non-limiting example, the combination substrate described above canbe used as a backing plate for sputtering targets.

The present invention will further be described by reference to thefollowing examples. The following examples are merely illustrative ofthe invention and are not intended to be limiting. Unless otherwiseindicated, all percentages are by weight.

EXAMPLES

The molybdenum used typically had a thermal conductivity (TC) of 140W/m°K and coefficient of thermal expansion (CTE) of about 5.1 PPM/° C.from 26° C. to 400° C. in a nitrogen atmosphere.

Cold worked pure molybdenum foils were rolled to 0.005″ (0.0127 cm, the5 mil foil) and 0.010″ (0.0254 cm, the 10 mil foil) thicknesses. A photochemical mask was applied on both sides of each foil and a staggeredhole pattern with a hole volume of 28% was created by a photo chemicalmilling techniques from both sides for better hole tolerance control.The typical diameter size was approximately 1.2 times the foil thicknessfor both the 5 and 10 mil materials. Since the holes were larger on the10 mil strip there were fewer holes per unit area than on the 5 milstrip.

The milled molybdenum had a CTE of 5.65 ppm from 27° C. to 400° C.

Samples were placed on graphite boats with strips of 0.028″ oxygen freehigh conductivity (OFHC) copper foil and passed through a conveyorfurnace at 3 inches/minute at 2000° F. (1093° C.) in a hydrogenatmosphere at a dew point of −80° C.

The 5 mil foil wet easily but the 0.0101″ foil was not uniformly wet.This was attributed to the longer time needed to etch through 10 mils ofMo and the subsequent rougher surface.

The 10 mil foil was placed on the same graphite boats with no Cu foiland passed trough the same furnace at 3″/minute to reduce and clean thestrip surface. The same strip was again placed on a graphite boat underthe same conditions as indicated above with Cu foil. The uniformity ofthe wetting was now equivalent to the 5 mil strip.

Single Layer Foil

5 Mil Foil

A 5 mil Mo foil was run through a furnace with 1 piece of a 2.8 mil Cufoil which covered the entire surface. This foil thickness was roughlyequivalent to the 40% hole volume with additional material to cover theMo surface. Some areas of the surface had areas where the Cu was notuniformly wet and Cu built up approximately 1 mil on the top surface.Some samples displayed this condition while others were wet uniformly.In all cases the molten Cu did not completely fill the holes andelectroplating was needed to completely fill any depressions and createa smooth Cu overlayer. The variation was attributed to fixturing andcapillarity.

Samples were cut into approximately ⅝″ squares and were plated withelectrolytic copper until the samples were completely smooth. The 5 milfoil had a 4.5 mil copper overcoat on each side with a total thicknessof 14 mil and a TC of 232-236 W/m°K.

10 Mil Foil

A 10 mil Mo foil was run through the furnace with 2 pieces of 2.8 mil Cufoil which covered the entire surface. This foil thickness was roughlyequivalent to the 40% hole volume with additional material to cover theMo surface. Some areas of the surface had areas where the Cu was notuniformly wet and built up approximately 1 mil on the top surface, Somesamples displayed this condition while others were wet uniformly. In allcases the molten Cu did not completely fill the holes and electroplatingwas needed to completely fill any depressions and create a smooth Cuoverlayer. The variation was attributed to fixturing and capillarity.

Samples were cut into approximately ⅝″ squares and had a total thicknessof 12 mil and a CTE of about 6.36 ppm from 26° C. to 400° C. in anitrogen atmosphere.

This result demonstrates that the substrates of the present invention donot follow the rule of mixtures. This sample has a predicted CTE of 10.9ppm [5.1 (CTE of Mo)×0.51 (volume fraction of Mo)+17 (CTE of Cu)×0.49(volume fraction of Cu)=10.9 ppm], but a measured CTE of 6.3 ppm.

5 Mil Foil Ni Plated

5 mil foils were plated with 2 mil of Ni and diffusion baked at 1800° F.(982° C.) to promote adhesion and processed with molten Cu to improve Cuwettability.

The 5 mil Mo foil was run through the furnace with 1 piece of 2.8 mil Cufoil which covered the entire surface. This foil thickness was roughlyequivalent to the 40% hole volume with additional material available tocover the Mo surface. The molten Cu completely filled the holes andelectroplating was needed to completely fill any depressions and createa smooth Cu overlayer. The Ni improved the wetting of the molybdenumsurface.

10 Mil Foil Ni Plated

10 mil foils were plated with 2 microinches of Ni and diffusion baked at1800° F. (982° C.) to determine if the Ni coating improved Cuwettability.

The 10 mil Mo foil was run through the furnace with 2 pieces of 2.8 milfoil which covered the entire surface. This foil thickness was roughlyequivalent to the 40% hole volume with additional material available tocover the Mo surface. The molten Cu completely filled the holes andelectroplating was needed to completely fill any depressions and createa smooth Cu overlayer. The Ni improved the wetting of the molybdenumsurface but the wetting was not as good as in the 5 mil foil experiment.This was attributed to better capillarity because of the smallerdiameter holes.

Samples were cut into approximately ⅝″ squares and had a thickness of 10mil and TC of 190 W/m°K.

The samples were next plated with electrolytic copper until the sampleswere completely smooth, The copper overcoat was 5 mil thick and theoverall thickness of 20 mil. The samples had a thermal conductivity offrom 185-219 W/m°K depending on the measuring time (1.3-28.8 msec).

Two or More Foil Layers

5 Mil Foils

Two 5 mil thick pieces of molybdenum perforated foil were placed on thegraphite boats with a 2.8 mil Cu foil in between them and another on thetop. The samples were processed in the same manner. The wetability ofthe Mo surface was superior and the molten Cu moved very uniformly outto the edges of the strip. No non uniform buildup of Cu on the surfacewas experienced. It appears that the gap between the strip surfaces hadprovided a capillary path which moved the Cu more uniformly than in thecase of the single strip experiments. The use of a thin Ni surface layerwas not needed for good wetability. This is beneficial because the Nican influence the TC of the Mo—Cu matrix.

Samples were cut into approximately ⅝″ squares and had a thickness of 12mil and TC of 219 W/m°K.

5 Mil Foils

Two 5 mil thick pieces of molybdenum perforated foil were placed on thegraphite boats with a 1 mil Cu foil between them and 5 mil Cu foil alongthe top and bottom surfaces. The samples were processed in the samemanner. The resulting substrate was cross-sectioned and photographed at30× as shown in FIG. 5. The photograph of substrate 30 shows topmolybdenum piece 34, bottom molybdenum piece 35, with a thin layer ofcopper 36 between top piece 34 and bottom piece 35. Top copper layer 32and bottom copper layer 33 are connected via bottom copper filled bole38 and top copper filled hole 39.

10 Mil Foils

Two 10 mil thick pieces of Mo perforated foil were placed on thegraphite boats with a 2.8 mil Cu foil in between them and another on thetop. In this case the Mo strip was not passed through the furnace in ahydrogen atmosphere to clean the surface. The samples were processed inthe same manner. The wetability of the Mo surface was superior and themolten Cu moved very uniformly out to the edges of the strip. No nonuniform buildup of Cu on the surface was experienced but the remainingindentations were deeper than with the two 5 mil foils because of thereduced amount of available Cu. It appears that the gap between thestrip surfaces again provided a capillary path which moved the Cu moreuniformly than in the case of the single strip experiments. Thus, theuse of a thin Ni surface layer was not needed. This is beneficial sincethe Ni can influence the TC of the Mo—Cu matrix. The experienced degreeof improvement with the 10 mil foil over a single 10 mil foil wassuperior to that experienced with the 5 mil single and multiple foilequivalents.

Samples were cut into approximately ⅝″ squares and had a thickness of 22mil and TC of 273 W/m°K.

The samples were next plated with electrolytic copper until the sampleswere completely smooth. The samples had a thickness of 21 mil and CTE of8.13 ppm from 26° C. to 400° C. in a nitrogen atmosphere.

The data demonstrate that the substrates according to the presentinvention provide significantly enhanced thermal conductivity with onlya minimal increase in the coefficient of thermal expansion compared withusing only a molybdenum substrate.

Although the invention has been described in detail in the foregoing forthe purpose of illustration, it is to be understood that such detail issolely for that purpose and that variations can be made therein by thoseskilled in the art without departing from the spirit and scope of theinvention except as it may be limited by the claims.

1-22. (canceled)
 23. A method of making a substrate for semiconductorand integrated circuit components comprising: providing a foil or plateor plate comprising a Group VIB metal from the periodic table of theelements and/or an anisotropic material; forming a plurality of openingsextending, at least partially, from a first major surface to a secondmajor surface of the foil or plate; filling the space encompassed by atleast some of the openings with a Group IB metal from the periodic tableof the elements or other high thermally conductive materials; andoptionally forming a layer comprising a Group IB metal from the periodictable of the elements or other high thermally conductive materials overat least a portion of the first major surface and at least a portion ofthe second major surface.
 24. The method according to claim 23, whereinthe Group VIB metal is selected from the group consisting of molybdenum,tungsten, an alloy containing molybdenum and tungsten, an alloy ofmolybdenum, an alloy of tungsten, and combinations thereof.
 25. Themethod according to claim 23, wherein the Group IB metal is copper orsilver.
 26. The method according to claim 23, wherein the other highthermally conductive material is selected from the group consisting ofdiamond, alloys, composite materials, and nanotubes.
 27. The methodaccording to claim 23, wherein the layer contains one or more materialshaving a thermal conductivity of from 200 to 2,200 W/M°K.
 28. The methodaccording to claim 23, wherein the substrate has a thickness of from 1to 50 mils.
 29. The method according to claim 23, wherein the thicknessof the foil or plate varies form 1 to 10 mils for a first portion of thefoil or plate to 10 to 50 mils for a second portion of the foil orplate.
 30. The method according to claim 23, wherein the openings arefrom 1 to 40 mils at their largest dimension.
 31. The method accordingto claim 23, wherein the ratio of the diameter of the openings to thethickness of the plate is from 0.75 to 1.5.
 32. The method according toclaim 23, wherein the thickness of the layer varies form 0 to 10 milsover a first portion of the foil or plate to 5 to 50 mils over a secondportion of the foil or plate.
 33. The method according to claim 23,wherein the ratio of the thickness of the foil or plate to the thicknessof the layer over the first major surface is from 1:0.1 to 1:2 and thelayer over the second major surface is from 1:0.1 to 1:2.
 34. The methodaccording to claim 23, wherein the substrate has a thermal conductivityof at least 50 W/M°K.
 35. The method according to claim 23, wherein theGroup VIB metal is molybdenum and the Group IB metal is copper.
 36. Themethod according to claim 23, wherein the Group VIB metal is tungstenand the Group IB metal is copper.
 37. The method according to claim 23,wherein the foil or plate is metal and has a thermal conductivity offrom 50 to 200 W/M°K.
 38. The method according to claim 23, wherein thecore plate comprises an anisotropic material and has a thermalconductivity of from 50 to 2,200 W/M°K.
 39. The method according toclaim 23, wherein the layer has a thermal conductivity of from 200 to500 W/M°K.
 40. The method according to claim 23, wherein the openings inthe foil or plate have a shape selected from group consisting of round,square, rectangular, hexagonal and octagonal.
 41. The method accordingto claim 23, wherein the openings in the foil or plate have a crosssectional shape selected from the group consisting of an hour glass-typeshape, cone shape, straight sided shape and combinations thereof. 42.The method according to claim 23, wherein the openings in the foil orplate comprise from 5 to 90 percent of the volume of the foil or plate.43. The method according to claim 23, wherein the openings are formed inthe foil or plate by a method selected from the group consisting ofetching, stamping, drilling, laser drilling, chemical milling, andcombinations thereof.
 44. The method according to claim 23, wherein thelayer is formed using one or methods selected from the group consistingof melting, thermal spray, powder melt, electroplating, melt andelectroplate, sputtering, selective plating, infiltration, casting,pressure casting, and combinations thereof.
 45. The method according toclaim 23, wherein the layer comprises from 0.001 to 1 percent by weightof the layer of Ni.
 46. The method according to claim 23, wherein two ormore strips of a Group IB metal are placed over a surface of the foil orplate and heated to a melting temperature of the Group IB metal to fillthe space encompassed by at least some of the openings and to form thelayer.
 47. The method according to claim 23, wherein all stress inducingprocess steps and stress relieving steps are completed prior to addingthe Group IB metal to the foil or plate.
 48. The method according toclaim 23 further comprising a final reduction step.
 49. A substrate madeaccording to the method of claim
 23. 50. An electronic packagingcomponent comprising the substrate according to claim 49 and one or moresemiconductor components.
 51. The electronic packaging componentaccording to claim 50, wherein the electronic packaging component isselected from the group consisting of wireless communications devices,fiber optic lasers, power generating semiconductors, resistors, andopto-electronic devices.
 52. The substrate for electronic packagingcomponents and integrated circuit components according to claim 1,wherein the substrate is a hermetic structure.
 53. A stacked substratecomprising two or more substrates according to claim 1 placed one on topof the other.
 54. The stacked substrate according to claim 53 having athickness of from 2 mil to 1,000 mil.
 55. The stacked substrateaccording to claim 53, wherein the Group VIB metal is selected from thegroup consisting of molybdenum, tungsten, an alloy containing molybdenumand tungsten, an alloy of molybdenum, an alloy of tungsten, andcombinations thereof.
 56. The stacked substrate according to claim 53,wherein the Group IB metal is copper, an alloy of copper, silver, or analloy of silver.
 57. The stacked substrate according to claim 53 havinga capillary path between a first substrate layer and a second substratelayer.
 58. The stacked substrate according to claim 53, wherein theratio of the diameter of the openings to the thickness of the stackedsubstrate is less than 0.75.
 59. A combination substrate comprising thesubstrate according to claim 1 attached to a second substrate.
 60. Thecombination substrate according to claim 59, wherein the secondsubstrates is selected from the group consisting of steel, aluminum,copper, ceramic substrates and combinations thereof.
 61. A backing platefor a sputtering target comprising the combination substrate accordingto claim
 59. 62. A combination substrate comprising the stackedsubstrate according to claim 53 attached to a second substrate.
 63. Thecombination substrate according to claim 62, wherein the secondsubstrates is selected from the group consisting of steel, aluminum,copper, ceramic substrates and combinations thereof.
 64. A backing platefor a sputtering target comprising the combination substrate accordingto claim 62.